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From: John Davidson
Date: 9/3/99
Time: 11:12:32 AM
Remote Name: 206.16.140.254
Yes, my understanding is that in a metal point contact (Shottky Barrier) Junction, the PN junction is formed inside the semiconductor material by passive migration of free electrons across the field set up over a small area at the point by the dissimilar material contact at the metal point into the simiconductor material. The electrons settle into lattice holes and effectively 'dope' the semiconductor material. That doping penetrates only a few molecules, and where it stops is the PN junction.
I have read that iron-silicon Schottky barrier metal point contact junctions break down in time. I can't remember the exact reason. The IC industry says don't use iron on silicon. I speculate that is how metal-galena, and also in iron-rust junctions work. I also speculate that may be why phospher bronze sometimes works slightly better on galena than iron.
Regards, John
From: Tom Polk
Date: 3/18/99
Time: 9:58:24 PM
Remote Name: 209.198.128.80
I would like to get a copy of the article. Would you please email me at tpolk@stanberry.com? Thanks.